PBRP113ET,215

Manufacturer :

Nexperia

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

600 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

130 @ 300mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

250 mW

Product Status :

Active

Resistor - Base (R1) :

1 kOhms

Resistor - Emitter Base (R2) :

1 kOhms

Supplier Device Package :

TO-236AB

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

750mV @ 6mA, 600mA

Voltage - Collector Emitter Breakdown (Max) :

40 V