DMT10H010LPS-13

制造商 :

Diodes Incorporated

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

9.4A (Ta), 98A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

71 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3000 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Power Dissipation (Max) :

1.2W (Ta), 139W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

9.5mOhm @ 13A, 10V

Supplier Device Package :

PowerDI5060-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA