NX6008NBKR

制造商 :

Nexperia

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

270mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.7 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

27 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

270mW (Ta), 1.3W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.8Ohm @ 300mA, 4.5V

Supplier Device Package :

TO-236AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

900mV @ 250µA