SI8900EDB-T2-E1

制造商 :

Vishay

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

5.4A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual) Common Drain

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

10-UFBGA, CSPBGA

Power - Max :

1W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

10-Micro Foot™ CSP (2x5)

Vgs(th) (Max) @ Id :

1V @ 1.1mA