G180N06S2

制造商 :

Goford Semiconductor

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2330pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

2W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

20mOhm @ 6A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.4V @ 250µA