NSBC113EF3T5G

制造商 :

onsemi

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SOT-1123

Power - Max :

254 mW

Product Status :

Active

Resistor - Base (R1) :

1 kOhms

Resistor - Emitter Base (R2) :

1 kOhms

Supplier Device Package :

SOT-1123

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V