2N2060M

制造商 :

Central Semiconductor

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

2nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 5V

Frequency - Transition :

60MHz

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

TO-78-6 Metal Can

Power - Max :

3W

Product Status :

Obsolete

Supplier Device Package :

TO-78-6

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

60V